Analysis of Statistical Data on High-Voltage GaN Devices

Statistical data analysis reveals that companies like CorEnergy, GaNPower, and Power Integrations (PI) have launched multiple kilovolt-level GaN devices, further extending the high-voltage applications of GaN. For kilovolt withstand voltage GaN, it leverages the original advantages of GaN in consumer-grade applications—such as high frequency, low loss, small packaging, and high power density—and extends them to the high-voltage segment to compete with super-junction MOS, IGBT, and SiC. Even under high voltage, it maintains extremely low switching losses, no body diode reverse recovery, and high-frequency operation capabilities, which can significantly improve system efficiency, reduce the size of magnetic and filtering components, allowing 3kW to tens of kW power supplies to achieve higher power in the same volume or become smaller and lighter at the same power, while also facilitating direct connection to high-voltage buses and reducing the number of cascaded stages.

In the realm of type c wall charger and desktop charger applications, these advancements are particularly relevant.

Kilovolt Withstand Voltage GaN

Statistical data has screened out six kilovolt withstand voltage GaN devices, with voltage ratings covering 1200~1700V, and package types including TO, DFN, and InSOP-T28G. Detailed information on these devices will be introduced in detail below. For type c wall charger, desktop charger designs, such high-voltage GaN can enhance performance.

CorEnergy (Neng Hua)

CorEnergy CE12H080TOCI The CorEnergy CE12H080TOCI is a 1200V GaN power device with an on-resistance of 80mΩ and a gate charge of 10.7nC. It uses TO247 packaging and improves efficiency through high switching speed and low conduction loss. This device also features easy driving, compatibility with silicon MOS gate drivers, and the ability to reduce system size and weight through higher power density. In terms of applications, the CE12H080TOCI is widely used in new energy, industrial, and automotive fields. It provides support for systems requiring compact and efficient forms, and complies with RoHS environmental standards. Integrating into type c wall charger, desktop charger systems can boost efficiency.

CorEnergy CE12H180TOAI

The CorEnergy CE12H180TOAI is a 1200V GaN power device with an on-resistance of 180mΩ and a gate charge of 10.7nC. It uses TO220 packaging and improves efficiency through high switching speed and low conduction loss. This device also features easy driving, compatibility with silicon MOS gate drivers, and the ability to reduce system size and weight through higher power density. In terms of applications, the CE12H080TOAI is widely used in new energy, industrial, and automotive fields. It provides support for systems requiring compact and efficient forms, and complies with RoHS environmental standards. Type c wall charger, desktop charger markets benefit from such innovations.

GaNPower (Liang Xin Wei)

GaNPower GPIHV30DFN The GPIHV30DFN is a 1200V withstand voltage enhancement-mode GaN device using DFN8x8 packaging, with an on-resistance of only 65mΩ. It has excellent switching performance and is suitable for high-frequency and high-efficiency applications. This device is suitable for switching power supplies, electric vehicle OBC and DC-DC converters, server and telecom power applications, UPS, inverters, and photovoltaic systems, making it ideal for products requiring high performance and compact design.Especially in type c wall charger, desktop charger scenarios, it offers advantages.

GaNPower GPIHV30SB5L

The GPIHV30SB5L is a 1200V withstand voltage enhancement-mode GaN device using TO263-5L packaging, with an on-resistance of only 65mΩ. It has excellent switching performance and is suitable for high-frequency and high-efficiency applications.This device is suitable for switching power supplies, electric vehicle OBC and DC-DC converters, server and telecom power applications, UPS, inverters, and photovoltaic systems, making it ideal for products requiring high performance and compact design.Type c wall charger, desktop charger integration can lead to smaller footprints.

GaNPower GPIXU30SB5L

The GPIXU30SB5L is a 1200V withstand voltage enhancement-mode GaN device using TO263-5L packaging, with an on-resistance of only 70mΩ. It has excellent switching performance and is suitable for high-frequency and high-efficiency applications. This device is suitable for switching power supplies, electric vehicle OBC and DC-DC converters, server and telecom power applications, UPS, inverters, and photovoltaic systems, making it ideal for products requiring high performance and compact design.For type c wall charger, desktop charger, these features enable faster charging.

PI (Power Integrations)

PI IMX2353F

The IMX2353F belongs to the InnoMux2-EP series chips, with a withstand voltage of 1700V and using InSOP-T28G packaging. It supports advanced zero-voltage switching topologies, designed for high-performance applications, and supports external power factor correction to improve overall system efficiency, reduce losses and harmonics. Additionally, the integrated EcoSmart technology optimizes energy consumption in light-load or standby states, further enhancing energy efficiency. The chip also has overvoltage protection to effectively prevent voltage spikes from damaging the circuit, reducing dependence on external components. It has a wide range of applications, especially in scenarios requiring high-voltage protection. Moreover, this device can operate in 200~1000V DC scenarios, suitable for 800VDC platform applications.

The InnoMux2-EP series complies with international safety and environmental standards, with RoHS certification to ensure no harmful substances, meeting environmental requirements. At the same time, the product has passed CE certification, complying with electromagnetic compatibility and safety standards in Europe and global markets. The chip is suitable for type c wall charger, desktop charger environments.

Kilovolt withstand voltage GaN devices are gradually becoming important competitors in high-voltage application fields, especially showing broad application prospects in new energy, industrial, and automotive sectors. Based on advantages such as low switching losses, high efficiency, and small size, GaN devices are gradually achieving differentiated competition in the competition with traditional high-voltage devices like MOS, IGBT, and SiC. In the future, with the launch of more high-voltage GaN products, it is expected to further promote the miniaturization and high efficiency of high-power-density systems, meeting the extreme efficiency demands in scenarios such as AI server power supplies, new energy vehicles, and energy storage.

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